We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10-3 Ωcm to 104 Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.