Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs
Summary :
We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10-3 Ωcm to 104 Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.
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- IEICE TRANSACTIONS on Electronics Vol.E83-C No.10 pp.1614-1617
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- 2000/10/25
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Akira OHTOMO, Masashi KAWASAKI, "Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs" in IEICE TRANSACTIONS on Electronics,
vol. E83-C, no. 10, pp. 1614-1617, October 2000, doi: .
Abstract: We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10-3 Ωcm to 104 Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e83-c_10_1614/_p
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@ARTICLE{e83-c_10_1614,
author={Akira OHTOMO, Masashi KAWASAKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs},
year={2000},
volume={E83-C},
number={10},
pages={1614-1617},
abstract={We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10-3 Ωcm to 104 Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - Novel Semiconductor Technologies of ZnO Films towards Ultraviolet LEDs and Invisible FETs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1614
EP - 1617
AU - Akira OHTOMO
AU - Masashi KAWASAKI
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E83-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2000
AB - We present novel semiconductor technologies of ZnO epitaxial films with using laser molecular-beam epitaxy method. Exciting optical properties such as room temperature lasing in ZnO nanocrystalline films and quantum size effects in ZnO/MgxZn1-xO superlattices were observed. By developing crystalline quality with using lattice-matched substrates, we could control resistivity of the doped ZnO films from 10-3 Ωcm to 104 Ωcm. These results would provide us an opportunity to construct a monolithic array consisted of light emitting devices and field effect transistors towards a possible flat panel display.
ER -
English
