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[Author] Arijit BOSE(1hit)

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  • AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications Open Access

    Akio WAKEJIMA  Arijit BOSE  Debaleen BISWAS  Shigeomi HISHIKI  Sumito OUCHI  Koichi KITAHARA  Keisuke KAWAMURA  

     
    INVITED PAPER

      Pubricized:
    2022/04/21
      Vol:
    E105-C No:10
      Page(s):
    457-465

    A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.