AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Akio WAKEJIMA; Arijit BOSE; Debaleen BISWAS; Shigeomi HISHIKI; Sumito OUCHI; Koichi KITAHARA; Keisuke KAWAMURA

doi:10.1587/transele.2022MMI0009

Open Access
AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, Keisuke KAWAMURA

Full Text Views

94

Cite this

Free PDF (4.2MB)

Summary :

A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.

Publication: IEICE TRANSACTIONS on Electronics Vol.E105-C No.10 pp.457-465

Publication Date: 2022/10/01

Publicized: 2022/04/21

Online ISSN: 1745-1353

DOI: 10.1587/transele.2022MMI0009

Type of Manuscript: Special Section INVITED PAPER (Special Section on Microwave and Millimeter-Wave Technologies)

Category

Authors

Akio WAKEJIMA
  Nagoya Institute of Technology
Arijit BOSE
  Nagoya Institute of Technology
Debaleen BISWAS
  Nagoya Institute of Technology
Shigeomi HISHIKI
  Air Water Inc.
Sumito OUCHI
  Air Water Inc.
Koichi KITAHARA
  Air Water Inc.
Keisuke KAWAMURA
  Air Water Inc.

Keyword

AlGaN/GaN, high electron mobility transistor (HEMT), GaN-on-Si, 3C-SiC intermediate layer, microwave amplifier

Cite this

Copy

Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, Keisuke KAWAMURA, "AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications" in IEICE TRANSACTIONS on Electronics, vol. E105-C, no. 10, pp. 457-465, October 2022, doi: 10.1587/transele.2022MMI0009.
Abstract: A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022MMI0009/_p

Copy

@ARTICLE{e105-c_10_457,
author={Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, Keisuke KAWAMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications},
year={2022},
volume={E105-C},
number={10},
pages={457-465},
abstract={A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.},
keywords={},
doi={10.1587/transele.2022MMI0009},
ISSN={1745-1353},
month={October},}

Copy

TY - JOUR
TI - AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 457
EP - 465
AU - Akio WAKEJIMA
AU - Arijit BOSE
AU - Debaleen BISWAS
AU - Shigeomi HISHIKI
AU - Sumito OUCHI
AU - Koichi KITAHARA
AU - Keisuke KAWAMURA
PY - 2022
DO - 10.1587/transele.2022MMI0009
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.
ER -