The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO2 film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.