Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor

Makoto AKIZUKI; Masaki HIRASE; Atsushi SAITA; Hiroyuki AOE; Atsumasa DOI

Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor

Makoto AKIZUKI, Masaki HIRASE, Atsushi SAITA, Hiroyuki AOE, Atsumasa DOI

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The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO₂ film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1007-1012

Publication Date: 1992/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)

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Makoto AKIZUKI, Masaki HIRASE, Atsushi SAITA, Hiroyuki AOE, Atsumasa DOI, "Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 9, pp. 1007-1012, September 1992, doi: .
Abstract: The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO₂ film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1007/_p

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@ARTICLE{e75-c_9_1007,
author={Makoto AKIZUKI, Masaki HIRASE, Atsushi SAITA, Hiroyuki AOE, Atsumasa DOI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor},
year={1992},
volume={E75-C},
number={9},
pages={1007-1012},
abstract={The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO₂ film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
T2 - IEICE TRANSACTIONS on Electronics
SP - 1007
EP - 1012
AU - Makoto AKIZUKI
AU - Masaki HIRASE
AU - Atsushi SAITA
AU - Hiroyuki AOE
AU - Atsumasa DOI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO₂ film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.
ER -