MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.

MOSFETs can be used as capacitors, but its capacitance can vary by 5 to 7 times as its terminal voltage varies. To reduce the voltage dependence of the capacitance, this paper proposed two types of devices: one is called accumulation MOSFET (AMOS) and the other is formed by two conventional PMOS connected in anti-parallel. These two devices are readily available in the standard digital CMOS processes. The proposed capacitors were implemented in three different CMOS processes. The measured results show that the capacitances of both devices have less voltage dependence than a single PMOS. The voltage dependence of the AMOS capacitance can be as small as 17%. The minimum capacitance per unit area of the AMOS is 1.8 times that of the double-poly capacitor in an analog/mixed-mode CMOS process. To verify the usefulness of these two types of capacitors, they are used as compensation capacitors in a conventional two-stage amplifier. The measured results show that the amplifier compensated by the AMOS capacitor has little variation (6%) of the unity-gain frequency over the input common-mode range. Due to its smaller die area and cheaper digital process, AMOS can be used as compensation capacitor without resorting to more expensive analog process.

The quality of polycrystalline silicon films and electrical characteristics of polycrystalline silicon gate metal-oxide-semiconductor (MOS) capacitors were investigated under various processing conditions, including phosphorus doping. The stresses observed in Si films deposited in the amorphous phase show complex behavior during thermal treatment. The stresses in as-deposited Si films are compressive. They change to tensile with annealing at 800, and to compressive after an additional annealing at 900. The kind of charges trapped in the SiO2 film during the negative constant current stress in Polycrystalline silicon gate MOS capacitors differ with the maximum process temperature. The trapped charges of samples annealed at 800 were negative, while those of samples annealed at 900 were positive.