Recent studies investigating the Internet topology reported that inter Autonomous System (AS) topology exhibits a power-law degree distribution which is known as the scale-free property. Although there are many models to generate scale-free topologies, no game theoretic approaches have been proposed yet. In this paper, we propose the new dynamic game theoretic model for the AS level Internet topology formation. Through numerical simulations, we show our process tends to give emergence of the topologies which have the scale-free property especially in the case of large decay parameters and large random link costs. The significance of our study is summarized as following three topics. Firstly, we show that scale-free topologies can also emerge from the game theoretic model. Secondly, we propose the new dynamic process of the network formation game for modeling a process of AS topology formation, and show that our model is appropriate in the micro and macro senses. In the micro sense, our topology formation process is appropriate because this represents competitive and distributed situation observed in the real AS level Internet topology formation process. In the macro sense, some of statistical properties of emergent topologies from our process are similar to those of which also observed in the real AS level Internet topology. Finally, we demonstrate the numerical simulations of our process which is deterministic variation of dynamic process of network formation game with transfers. This is also the new result in the field of the game theory.

We have proposed and demonstrated the principle of optical mode switch. However, the crosstalk between modes has not yet reported due to the difficulty of mode recognition and distinction. To accomplish this mode crosstalk evaluation, we integrated multimode interference (MMI) mode filter with the optical mode switch in this work. As a result, for the both TE and TM modes, the crosstalk of approximately -10 dB has been evaluated experimentally.

0.25-µm gate low-noise high electron mobility transistors (HEMTs) have been developed, using epitaxial wafers grown by metal-organic-chemical vapour deposition (MOCVD) technique. Minimum noise figures of 0.75 dB and 1.2 dB with associated gains of 11.1 dB and 7.9 dB are obtained at 12 GHz and 18 GHz, respectively, at room temperature. These are the lowest noise figures yet reported for low-noise HEMTs fabricated on MOCVD epitaxial wafers.

This paper presents a 1 V operating fully differential OTA using NMOS inverters in place of the traditional differential pair. To obtain high gain, a two-stage configuration is used in which the first stage has feedforward paths to cancel the common-mode signal, and the second stage has common-mode feedback paths to stabilize the output common-mode voltage. The proposed OTA was fabricated by an 0.18 µm CMOS technology. Measured gain is 40 dB and GBW is 10 MHz, in addition to differential output voltage swing of 1.8 Vp - p. It is confirmed that the proposed OTA can operate from 1 V power supply and has very large output swing capability even in a 1 V operation. The proposed OTA configuration contributes to a solution to the low power supply voltage issue in scaled CMOS analog circuits.