Location control of grains by µ-Czochralski process with excimer-laser is a powerful tool for realizing high performance single-crystalline Si TFTs (c-Si TFTs). This study reports the behavior of p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by µ-Czochralski method. Self-aligned p-channel single-crystalline Si TFTs is fabricated with a top gate structure having ECR-PECVD SiO2 as gate insulator. The field effect hole mobility of 250 cm2/Vs and subthreshold swing of 0.29 V/dec. are obtained successfully. Effects of active Si thickness and boron channel doping on the characteristics of the c-Si TFTs were studied.

In this paper, we present a robust small-object detection method, which we call "Frequency Pattern Emphasis Subtraction (FPES)", for wide-area surveillance such as that of harbors, rivers, and plant premises. For achieving robust detection under changes in environmental conditions, such as illuminance level, weather, and camera vibration, our method distinguishes target objects from background and noise based on the differences in frequency components between them. The evaluation results demonstrate that our method detected more than 95% of target objects in the images of large surveillance areas ranging from 30-75 meters at their center.