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Vikas RANA Ryoichi ISHIHARA Yasushi HIROSHIMA Daisuke ABE Satoshi INOUE Tatsuya SHIMODA Wim METSELAAR Kees BEENAKKER
Location control of grains by µ-Czochralski process with excimer-laser is a powerful tool for realizing high performance single-crystalline Si TFTs (c-Si TFTs). This study reports the behavior of p-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by µ-Czochralski method. Self-aligned p-channel single-crystalline Si TFTs is fabricated with a top gate structure having ECR-PECVD SiO2 as gate insulator. The field effect hole mobility of 250 cm2/Vs and subthreshold swing of 0.29 V/dec. are obtained successfully. Effects of active Si thickness and boron channel doping on the characteristics of the c-Si TFTs were studied.