Efficient extraction of interconnect parasitic parameters has become very important for present deep submicron designs. In this paper, the improved boundary element method (BEM) is presented for 3-D interconnect resistance extraction. The BEM is accelerated by the recently proposed quasi-multiple medium (QMM) technology, which quasi-cuts the calculated region to enlarge the sparsity of the overall coefficient matrix to solve. An un-average quasi-cutting scheme for QMM, advanced nonuniform element partition and technique of employing the linear element for some special surfaces are proposed. These improvements considerably condense the computational resource of the QMM-based BEM without loss of accuracy. Experiments on actual layout cases show that the presented method is several hundred to several thousand times faster than the well-known commercial software Raphael, while preserving the high accuracy.