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Sebastien NUTTINCK Edward GEBARA Baskar BANERJEE Sunitha VENKATARAMAN Joy LASKAR Herbert M. HARRIS
We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.
Sebastien NUTTINCK Edward GEBARA Stephane PINEL Joy LASKAR
We report the investigation of major dispersion mechanisms such as self-heating, trapping, current collapse, and floating-body effects present in AlGaN/GaN HFETs. These effects are analyzed using DC/Pulsed IV, load-pull, low-frequency noise systems, and a cryogenic probe station. This study leads to a better understanding of the device physics, which is critical for accurate large-signal modeling and device optimization.