Applications of GaN Microwave Electronic Devices
Summary :
We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.
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- IEICE TRANSACTIONS on Electronics Vol.E86-C No.8 pp.1409-1415
- Publication Date
- 2003/08/01
- Publicized
- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Microwave and Millimeter Wave Technology)
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Sebastien NUTTINCK, Edward GEBARA, Baskar BANERJEE, Sunitha VENKATARAMAN, Joy LASKAR, Herbert M. HARRIS, "Applications of GaN Microwave Electronic Devices" in IEICE TRANSACTIONS on Electronics,
vol. E86-C, no. 8, pp. 1409-1415, August 2003, doi: .
Abstract: We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e86-c_8_1409/_p
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@ARTICLE{e86-c_8_1409,
author={Sebastien NUTTINCK, Edward GEBARA, Baskar BANERJEE, Sunitha VENKATARAMAN, Joy LASKAR, Herbert M. HARRIS, },
journal={IEICE TRANSACTIONS on Electronics},
title={Applications of GaN Microwave Electronic Devices},
year={2003},
volume={E86-C},
number={8},
pages={1409-1415},
abstract={We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.},
keywords={},
doi={},
ISSN={},
month={August},}
Copy
TY - JOUR
TI - Applications of GaN Microwave Electronic Devices
T2 - IEICE TRANSACTIONS on Electronics
SP - 1409
EP - 1415
AU - Sebastien NUTTINCK
AU - Edward GEBARA
AU - Baskar BANERJEE
AU - Sunitha VENKATARAMAN
AU - Joy LASKAR
AU - Herbert M. HARRIS
PY - 2003
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E86-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2003
AB - We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power, low noise and high temperature operations, along with a comparison of their characteristics with other conventional technologies. Finally, a single stage modulator driver for long haul optical communications is presented as an example of application of the GaN-based devices high power handling capabilities.
ER -
English
