A novel method of extraction of emitter, Re, and base, Rb, resistances of bipolar junction transistors, BJTs, is proposed. Re and Rb are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTs show that Re and Rb values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.