The switchable dual-wavelength and wavelength-con-verted nonreturn-to-zero-to-return-to-zero (NRZ-to-RZ) data transformation is demonstrated by externally seeding a synchronously sinusoidal-modulated laser diode with an optical pseudorandom bit sequence data at 1 Gbps. A maximum wavelength tuning range of 30 nm with an SMSR of greater than 36 dB is obtained. 1 Gbps on/off keying of single-mode RZ data pulse-train generated by externally seeding synchronously sinusoidal-modulated laser diode is demonstrated.

The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.