IEICE TRANSACTIONS on Electronics
Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate
Summary :
The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E91-C No.2 pp.173-180
- Publication Date
- 2008/02/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e91-c.2.173
- Type of Manuscript
- Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
- Category
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Gong-Ru LIN, "Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E91-C, no. 2, pp. 173-180, February 2008, doi: 10.1093/ietele/e91-c.2.173.
Abstract: The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e91-c.2.173/_p
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@ARTICLE{e91-c_2_173,
author={Gong-Ru LIN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate},
year={2008},
volume={E91-C},
number={2},
pages={173-180},
abstract={The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.},
keywords={},
doi={10.1093/ietele/e91-c.2.173},
ISSN={1745-1353},
month={February},}
Copy
TY - JOUR
TI - Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 173
EP - 180
AU - Gong-Ru LIN
PY - 2008
DO - 10.1093/ietele/e91-c.2.173
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E91-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2008
AB - The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.
ER -
English
