Novel structure TE and TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption-edge of the as-grown SL. By observing the near-field petterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light. These waveguides are applied to TE and TM mode filters using a bending waveguide to disperse unwanted signals. The extinction ratio is 14 dB for both types of filters. This value can be improved by optimizing the device structures.