Novel structure TE and TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption-edge of the as-grown SL. By observing the near-field petterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light. These waveguides are applied to TE and TM mode filters using a bending waveguide to disperse unwanted signals. The extinction ratio is 14 dB for both types of filters. This value can be improved by optimizing the device structures.
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Yasuhiro SUZUKI, Hidetoshi IWAMURA, Osamu MIKAMI, "TE/TM Mode Selective Channel Waveguides in GaAs/AlAs Superlattice Fabricated by SiO2 Cap Disordering" in IEICE TRANSACTIONS on transactions,
vol. E73-E, no. 1, pp. 83-87, January 1990, doi: .
Abstract: Novel structure TE and TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption-edge of the as-grown SL. By observing the near-field petterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light. These waveguides are applied to TE and TM mode filters using a bending waveguide to disperse unwanted signals. The extinction ratio is 14 dB for both types of filters. This value can be improved by optimizing the device structures.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e73-e_1_83/_p
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@ARTICLE{e73-e_1_83,
author={Yasuhiro SUZUKI, Hidetoshi IWAMURA, Osamu MIKAMI, },
journal={IEICE TRANSACTIONS on transactions},
title={TE/TM Mode Selective Channel Waveguides in GaAs/AlAs Superlattice Fabricated by SiO2 Cap Disordering},
year={1990},
volume={E73-E},
number={1},
pages={83-87},
abstract={Novel structure TE and TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption-edge of the as-grown SL. By observing the near-field petterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light. These waveguides are applied to TE and TM mode filters using a bending waveguide to disperse unwanted signals. The extinction ratio is 14 dB for both types of filters. This value can be improved by optimizing the device structures.},
keywords={},
doi={},
ISSN={},
month={January},}
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TY - JOUR
TI - TE/TM Mode Selective Channel Waveguides in GaAs/AlAs Superlattice Fabricated by SiO2 Cap Disordering
T2 - IEICE TRANSACTIONS on transactions
SP - 83
EP - 87
AU - Yasuhiro SUZUKI
AU - Hidetoshi IWAMURA
AU - Osamu MIKAMI
PY - 1990
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E73-E
IS - 1
JA - IEICE TRANSACTIONS on transactions
Y1 - January 1990
AB - Novel structure TE and TM mode selective optical channel waveguides are proposed and fabricated in GaAs/AlAs superlattices (SLs) using impurity-free disordering induced by SiO2 cap annealing. The disordered SL regions are found to be useful as low-loss waveguides even at a wavelength close to the absorption-edge of the as-grown SL. By observing the near-field petterns, it is confirmed that these channel waveguides could selectively confine TE or TM polarized light. These waveguides are applied to TE and TM mode filters using a bending waveguide to disperse unwanted signals. The extinction ratio is 14 dB for both types of filters. This value can be improved by optimizing the device structures.
ER -