The alloy of Ag (40wt%)-Pd(60wt%) has been used in the electrical contacts of electromechanical devices due to its superior contact properties. There is currently, an increasing trend to decrease the size of electromechanical devices. However, it has been difficult to obtain a high contact force and the high restoring force of contacts, and these problems cause contact failures such as high contact resistance. In response to this problem, the alloy is overlaid with an Au layer which is not affected by oxide films. However, when the contacts are subjected to an unacceptable amount of mechanical shock, adhesion of the Au overlay occurs easily. In order to solve these difficulties, it can be proposed to cover the contact surface with high electric conductive oxide films. With this concept, the Au overlay should be unnecessary. In the present study, to reduce the high contact resistance of the Ag-Pd alloy contaminated with an oxide film, very small amounts of Mg and Cr were used in separate doping trials to the alloy. The improvement of contact resistance characteristics is the focus of the present study. Specimens of Ag (40wt%)-Pd(60wt%), Ag-Pd-Mg(0.1, 0.5 and 1.0wt%), and Ag-Pd-Cr(0.1 and 0.5wt%) were oxidized at elevated temperatures to accelerate the process of oxidation, and the growth kinetic law of oxide films grown on the surfaces were evaluated by ellipsometry. The effect of the oxide film on the contact resistance characteristics were then clarified. A marked improvement of the contact resistance caused by the oxide film was found for the Ag-Pd alloy with a Mg doping agent. However, for the Cr doping agent, a low contact resistance was not obtained as same as the Ag-Pd alloy itself.

On account of its superior electrical contact performance, Ag (40wt%)-Pd(60wt%) alloy has been widely used to the electrical contacts of electromechanical devices. However, regarding small devices, some important difficulties arise due to the small size such as the degradation of the contact resistance caused by the oxide film grown on the surface. To solve these problems, it was reported previously that doping Mg and Cr into the Ag-Pd alloy was tried to improve the oxide film. As a result, the oxide film grown on the Ag-Pd-Mg surface exhibited a remarkably low contact resistance. However, for the oxide film on Ag-Pd-Cr, no improvement of the contact resistance was observed. In this study, to clarify the cause of the low contact resistance for Ag-Pd-Mg, the effect of the doping with a third element on the composition and formation of the oxide film was analyzed using electron diffractometry, XPS and STM. As a result, Ag was found to be distributed on the outermost surface and inside the oxide film formed on Ag-Pd-Mg. However, Ag was not found on the surface of and inside the oxide film formed on Ag-Pd-Cr. Therefore, it was concluded that the presence of Ag on the surface of and inside the oxide film reduces the resistivity of the film.