We have fabricated a 12 GHz-band monolithic microwave integrated circuit amplifier of which the noise level has been reduced down to 1.18-1.35 dB in the frequency range from 11.7 GHz to 12.7 GHz. The excellent characteristics come from the use of low-gate-resistance, low-equivalent-noise-resistance HEMT's which were obtained by using T-getes, and a hi-lo doping profile in an AlGaAs layer.