A 12-GHz-Band MMIC Low-Noise Amplifier with Low Rg and Low Rn HEMT's
Summary :
We have fabricated a 12 GHz-band monolithic microwave integrated circuit amplifier of which the noise level has been reduced down to 1.18-1.35 dB in the frequency range from 11.7 GHz to 12.7 GHz. The excellent characteristics come from the use of low-gate-resistance, low-equivalent-noise-resistance HEMT's which were obtained by using T-getes, and a hi-lo doping profile in an AlGaAs layer.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E74-C No.5 pp.1202-1208
- Publication Date
- 1991/05/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
- Category
- Active Devices and Circuits
Authors
Hiroshi TSUKADA
Kunihiko KANAZAWA
Yoshiro OISHI
Hiroshi TAKENAKA
Masahiro NISHIUMA
Masahiro HAGIO
Masaru KAZUMURA
Keyword
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Hiroshi TSUKADA, Kunihiko KANAZAWA, Yoshiro OISHI, Hiroshi TAKENAKA, Masahiro NISHIUMA, Masahiro HAGIO, Masaru KAZUMURA, "A 12-GHz-Band MMIC Low-Noise Amplifier with Low Rg and Low Rn HEMT's" in IEICE TRANSACTIONS on Electronics,
vol. E74-C, no. 5, pp. 1202-1208, May 1991, doi: .
Abstract: We have fabricated a 12 GHz-band monolithic microwave integrated circuit amplifier of which the noise level has been reduced down to 1.18-1.35 dB in the frequency range from 11.7 GHz to 12.7 GHz. The excellent characteristics come from the use of low-gate-resistance, low-equivalent-noise-resistance HEMT's which were obtained by using T-getes, and a hi-lo doping profile in an AlGaAs layer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e74-c_5_1202/_p
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@ARTICLE{e74-c_5_1202,
author={Hiroshi TSUKADA, Kunihiko KANAZAWA, Yoshiro OISHI, Hiroshi TAKENAKA, Masahiro NISHIUMA, Masahiro HAGIO, Masaru KAZUMURA, },
journal={IEICE TRANSACTIONS on Electronics},
title={A 12-GHz-Band MMIC Low-Noise Amplifier with Low Rg and Low Rn HEMT's},
year={1991},
volume={E74-C},
number={5},
pages={1202-1208},
abstract={We have fabricated a 12 GHz-band monolithic microwave integrated circuit amplifier of which the noise level has been reduced down to 1.18-1.35 dB in the frequency range from 11.7 GHz to 12.7 GHz. The excellent characteristics come from the use of low-gate-resistance, low-equivalent-noise-resistance HEMT's which were obtained by using T-getes, and a hi-lo doping profile in an AlGaAs layer.},
keywords={},
doi={},
ISSN={},
month={May},}
Copy
TY - JOUR
TI - A 12-GHz-Band MMIC Low-Noise Amplifier with Low Rg and Low Rn HEMT's
T2 - IEICE TRANSACTIONS on Electronics
SP - 1202
EP - 1208
AU - Hiroshi TSUKADA
AU - Kunihiko KANAZAWA
AU - Yoshiro OISHI
AU - Hiroshi TAKENAKA
AU - Masahiro NISHIUMA
AU - Masahiro HAGIO
AU - Masaru KAZUMURA
PY - 1991
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E74-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 1991
AB - We have fabricated a 12 GHz-band monolithic microwave integrated circuit amplifier of which the noise level has been reduced down to 1.18-1.35 dB in the frequency range from 11.7 GHz to 12.7 GHz. The excellent characteristics come from the use of low-gate-resistance, low-equivalent-noise-resistance HEMT's which were obtained by using T-getes, and a hi-lo doping profile in an AlGaAs layer.
ER -
English
