Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide "Fatigue Free" endurance, superior retention and imprint characteristics. In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption. Performance of LSI embedded with FeRAM for contactless IC card is also provided to demonstrate the feasibility of the circuit technology.