We have developed a 64-neuron electrically trainable BiCMOS analog neuroprocessor based on 3-layered PDP networks with a feedforward time as short as 10 µs which is equivalent to the operation speed as high as 108 multiplications per second. A crucial point in this development is application of a dynamic refreshment technique to a weighting circuit. A sufficiently long retention time of the synapse weight has thereby been attained, leading to a practical operation of the neuroprocessor.

We have developed a digital coprocessor with a dynamically reconfigurable pipeline architecture specified for a layered neural network which executes on-chip learning. The coprocessor attains a learning speed of 18 MCUPS that is approximately twenty times that of the conventional DSP. This coprocessor obtains expansibility in the calculation through a larger multi-layer, network by means of a network decomposition and a distributed processing approach.

A GaAs monolithic high-frequency modulator IC which provides an efficient suppression of the RIN of a laser diode under application of the high-frequency power to the diode is reported. The oscillation frequency and the output power of the IC are designed to be 800 MHz and 15 dBm, respectively. Use of the IC permitted suppression of the RIN of the laser diode by almost 10 dB/Hz.

Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide "Fatigue Free" endurance, superior retention and imprint characteristics. In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption. Performance of LSI embedded with FeRAM for contactless IC card is also provided to demonstrate the feasibility of the circuit technology.

Characterization of silicon devices incorporating the capacitor which uses ferroelectric thin films as capacitor dielectrics is presented. As cases in point, a DRAM cell capacitor and an analog/digital silicon IC using the thin film of barium strontium titanate (Ba1-xSRxTiO3) are examined. Production and characterization of the ferroelectric thin films are also described, focusing on a Metal Organic Deposition technique and liquid source CVD.