Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using 30Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH2Cl2 is determined to be about 1.00.2 monolayer.