Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy

Izumi KAWASHIMA; Yasuo TAKAHASHI; Tsuneo URISU

Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy

Izumi KAWASHIMA, Yasuo TAKAHASHI, Tsuneo URISU

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Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using ³⁰Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH₂Cl₂ is determined to be about 1.00.2 monolayer.

Publication: IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.986-989

Publication Date: 1992/09/25

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Type of Manuscript: Special Section PAPER (Special Issue on Silicon Devices and Materials)

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Izumi KAWASHIMA, Yasuo TAKAHASHI, Tsuneo URISU, "Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy" in IEICE TRANSACTIONS on Electronics, vol. E75-C, no. 9, pp. 986-989, September 1992, doi: .
Abstract: Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using ³⁰Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH₂Cl₂ is determined to be about 1.00.2 monolayer.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_986/_p

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@ARTICLE{e75-c_9_986,
author={Izumi KAWASHIMA, Yasuo TAKAHASHI, Tsuneo URISU, },
journal={IEICE TRANSACTIONS on Electronics},
title={Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy},
year={1992},
volume={E75-C},
number={9},
pages={986-989},
abstract={Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using ³⁰Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH₂Cl₂ is determined to be about 1.00.2 monolayer.},
keywords={},
doi={},
ISSN={},
month={September},}

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TY - JOUR
TI - Quantitative Analysis of Submonolayer Si on Ge Surface by Isotope Dilution Secondary Ion Mass Spectrscopy
T2 - IEICE TRANSACTIONS on Electronics
SP - 986
EP - 989
AU - Izumi KAWASHIMA
AU - Yasuo TAKAHASHI
AU - Tsuneo URISU
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using ³⁰Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH₂Cl₂ is determined to be about 1.00.2 monolayer.
ER -