Excimer laser annealing at 308nm in UV and semiconductor blue laser-diode annealing at 445nm were performed and compared in term of the crystallization depending on electrical properties of Si films. As a result for the thin Si films of 50nm thickness, both lasers are very effective to enlarge the grain size and to activate electrically the dopant atoms in the CVD Si film. Smooth Si surface can be obtained using blue-laser annealing of scanned CW mode. By improving the film quality of amorphous Si deposited by sputtering for subsequent crystallization, both laser annealing techniques are effective for LTPS applications not only on conventional glass but also on flexible sheet. By conducting the latter advanced annealing technique, small grain size as well as large grains can be controlled. As blue laser is effective to crystallize even rather thicker Si films of 1µm, high performance thin-film photo-sensor or photo-voltaic applications are also expected.

We have studied in detail the effect of gas flow rates on the film properties of low-temperature (300) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56 MHz) with SiF4/SiH4/H2 gases. The effect of SiH4 flow rate on crystallization is shown to be large. A small amount of SiH4 with high SiF4 and H2 flow rates (50[H2]/[SiH4]1200, 20[SiF4]/[SiH4]150, 1[H2]/[SiF4]16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential 〈110〉-orientation and the crystalline fraction is estimated to be more than 80%. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10-8-10-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-0.6 eV.

Isotope dilution secondary ion mass spectroscopy (ID-SIMS) using 30Si as a spike is investigated as a quantitative analysis method for trace amounts of Si. For a standard solution of Si, the relateve standard deviation of results using this method is 5% for 0.2 µg Si, and the determination lower limit is 18 ng. Using this method, the amount of Si deposited on the Ge(100) surface by the self-limited adsorption of SiH2Cl2 is determined to be about 1.00.2 monolayer.

The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).