High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient
Summary :
The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E75-C No.9 pp.1031-1035
- Publication Date
- 1992/09/25
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- Online ISSN
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- Type of Manuscript
- Special Section PAPER (Special Issue on Silicon Devices and Materials)
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Akio KITAGAWA, Masaki TAKEUCHI, Sadaki FUTAGI, Syungo KANAI, Kazunori TUBOTA, Yasuhiro KIZU, Masakuni SUZUKI, "High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient" in IEICE TRANSACTIONS on Electronics,
vol. E75-C, no. 9, pp. 1031-1035, September 1992, doi: .
Abstract: The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e75-c_9_1031/_p
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@ARTICLE{e75-c_9_1031,
author={Akio KITAGAWA, Masaki TAKEUCHI, Sadaki FUTAGI, Syungo KANAI, Kazunori TUBOTA, Yasuhiro KIZU, Masakuni SUZUKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient},
year={1992},
volume={E75-C},
number={9},
pages={1031-1035},
abstract={The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).},
keywords={},
doi={},
ISSN={},
month={September},}
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TY - JOUR
TI - High Speed Crystallization of a-Si by Lateral Sweep Annealing in Steep Temperature Gradient
T2 - IEICE TRANSACTIONS on Electronics
SP - 1031
EP - 1035
AU - Akio KITAGAWA
AU - Masaki TAKEUCHI
AU - Sadaki FUTAGI
AU - Syungo KANAI
AU - Kazunori TUBOTA
AU - Yasuhiro KIZU
AU - Masakuni SUZUKI
PY - 1992
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E75-C
IS - 9
JA - IEICE TRANSACTIONS on Electronics
Y1 - September 1992
AB - The a-Si films deposited on quartz substrates were crystallized by lateral sweep annealing in steep temperature gradient using a gas burner. Random nucleation in amorphous region was effectively suppressed in the temperature gradient, so lateral solid phase epitaxial growth from crystallites generated at the initial stage of lateral sweep annealing spread over 100 µm. Their crystallographic orientations were mostly (100).
ER -
English
