Effect of SiF4/SiH4/H2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Mikio MOHRI; Hiroaki KAKINUMA; Taiji TSURUOKA

Effect of SiF₄/SiH₄/H₂ Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Mikio MOHRI, Hiroaki KAKINUMA, Taiji TSURUOKA

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We have studied in detail the effect of gas flow rates on the film properties of low-temperature (300) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56 MHz) with SiF₄/SiH₄/H₂ gases. The effect of SiH₄ flow rate on crystallization is shown to be large. A small amount of SiH₄ with high SiF₄ and H₂ flow rates (50[H₂]/[SiH₄]1200, 20[SiF₄]/[SiH₄]150, 1[H₂]/[SiF₄]16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential 〈110〉-orientation and the crystalline fraction is estimated to be more than 80%. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10^-8-10^-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-0.6 eV.

Publication: IEICE TRANSACTIONS on Electronics Vol.E77-C No.10 pp.1677-1684

Publication Date: 1994/10/25

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Type of Manuscript: PAPER

Category: Semiconductor Materials and Devices

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Mikio MOHRI, Hiroaki KAKINUMA, Taiji TSURUOKA, "Effect of SiF4/SiH4/H2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition" in IEICE TRANSACTIONS on Electronics, vol. E77-C, no. 10, pp. 1677-1684, October 1994, doi: .
Abstract: We have studied in detail the effect of gas flow rates on the film properties of low-temperature (300) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56 MHz) with SiF₄/SiH₄/H₂ gases. The effect of SiH₄ flow rate on crystallization is shown to be large. A small amount of SiH₄ with high SiF₄ and H₂ flow rates (50[H₂]/[SiH₄]1200, 20[SiF₄]/[SiH₄]150, 1[H₂]/[SiF₄]16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential 〈110〉-orientation and the crystalline fraction is estimated to be more than 80%. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10^-8-10^-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-0.6 eV.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e77-c_10_1677/_p

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@ARTICLE{e77-c_10_1677,
author={Mikio MOHRI, Hiroaki KAKINUMA, Taiji TSURUOKA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effect of SiF4/SiH4/H2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition},
year={1994},
volume={E77-C},
number={10},
pages={1677-1684},
abstract={We have studied in detail the effect of gas flow rates on the film properties of low-temperature (300) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56 MHz) with SiF₄/SiH₄/H₂ gases. The effect of SiH₄ flow rate on crystallization is shown to be large. A small amount of SiH₄ with high SiF₄ and H₂ flow rates (50[H₂]/[SiH₄]1200, 20[SiF₄]/[SiH₄]150, 1[H₂]/[SiF₄]16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential 〈110〉-orientation and the crystalline fraction is estimated to be more than 80%. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10^-8-10^-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-0.6 eV.},
keywords={},
doi={},
ISSN={},
month={October},}

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TY - JOUR
TI - Effect of SiF4/SiH4/H2 Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition
T2 - IEICE TRANSACTIONS on Electronics
SP - 1677
EP - 1684
AU - Mikio MOHRI
AU - Hiroaki KAKINUMA
AU - Taiji TSURUOKA
PY - 1994
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E77-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 1994
AB - We have studied in detail the effect of gas flow rates on the film properties of low-temperature (300) polycrystalline silicon (poly-Si) films prepared by conventional plasma enhanced chemical vapor deposition (13.56 MHz) with SiF₄/SiH₄/H₂ gases. The effect of SiH₄ flow rate on crystallization is shown to be large. A small amount of SiH₄ with high SiF₄ and H₂ flow rates (50[H₂]/[SiH₄]1200, 20[SiF₄]/[SiH₄]150, 1[H₂]/[SiF₄]16) is important to form poly-Si films. The poly-Si films deposited under such optimized conditions had shown preferential 〈110〉-orientation and the crystalline fraction is estimated to be more than 80%. The deposition rates are in the range of 5-30 nm/min. The conductivity is in the range of 10^-8-10^-6 S/cm. Further, the electrical conduction indicates an activation type, and the activation energy is in the range of 0.5-0.6 eV.
ER -

Effect of SiF₄/SiH₄/H₂ Flow Rates on Film Properties of Low-Temperature Polycrystalline Silicon Films Prepared by Plasma Enhanced Chemical Vapor Deposition

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