In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.

Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.