Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure
Summary :
In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E90-C No.5 pp.1105-1110
- Publication Date
- 2007/05/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1093/ietele/e90-c.5.1105
- Type of Manuscript
- Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
- Category
- Semiconductor Devices
Authors
Keyword
Latest Issue
Copyrights notice of machine-translated contents
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Cite this
Copy
Nong CHEN, Jesse DARJA, Shinichi NARATA, Kenji IKEDA, Kazuhiro NISHIDE, Yoshiaki NAKANO, "Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure" in IEICE TRANSACTIONS on Electronics,
vol. E90-C, no. 5, pp. 1105-1110, May 2007, doi: 10.1093/ietele/e90-c.5.1105.
Abstract: In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.
URL: https://global.ieice.org/en_transactions/electronics/10.1093/ietele/e90-c.5.1105/_p
Copy
@ARTICLE{e90-c_5_1105,
author={Nong CHEN, Jesse DARJA, Shinichi NARATA, Kenji IKEDA, Kazuhiro NISHIDE, Yoshiaki NAKANO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure},
year={2007},
volume={E90-C},
number={5},
pages={1105-1110},
abstract={In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.},
keywords={},
doi={10.1093/ietele/e90-c.5.1105},
ISSN={1745-1353},
month={May},}
Copy
TY - JOUR
TI - Ridge Semiconductor Laser with Laterally Undercut Etched Current Confinement Structure
T2 - IEICE TRANSACTIONS on Electronics
SP - 1105
EP - 1110
AU - Nong CHEN
AU - Jesse DARJA
AU - Shinichi NARATA
AU - Kenji IKEDA
AU - Kazuhiro NISHIDE
AU - Yoshiaki NAKANO
PY - 2007
DO - 10.1093/ietele/e90-c.5.1105
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E90-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2007
AB - In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.
ER -
English
