A microwave photonic mixer utilizing an InGaAs photoconductor for radio over fiber applications is proposed and fabricated. Static and dynamic characteristics of the fabricated microwave photonic mixer were investigated. The microwave photonic mixer showed an optical bandwidth of approximately 300 MHz and a uniform conversion loss characteristic for the electrical input frequency up to 20 GHz.

An electrooptic near-field mapping system based on a gain-switched distributed feedback (DFB) pulsed laser and a CdTe electrooptic crystal was used for characterizing stationary and transient near-field patterns of conventional and uniplanar compact photonic band gap (UC-PBG) patch antennas. Effect of the UC-PBG structure on reduction in surface waves in the UC-PBG patch antenna was experimentally verified by comparing stationary and transient near-field measurement of the conventional and UC-PBG patch antennas.

Simultaneous all-optical frequency up/downconversion technique utilizing a single semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) for full-duplex WDM radio over fiber (RoF) applications is presented. Using this technique, error-free simultaneous upconversion and downconversion of RoF signals with a finite-length single mode fiber were experimentally demonstrated. The results show the potential of the proposed scheme for use in a cost-effective full-duplex WDM RoF link.

Carbon-doped base InP/InGaAs heterojunction bipolar transistor (HBT) technology for millimeter-wave application is presented. Ultra-high carbon doping of InGaAs layers lattice-matched to InP with hole concentrations in excess of 1 1020 /cm3 has been achieved using a chemical beam epitaxy (CBE). Heavily carbon-doped base InP/InGaAs HBT epi structures were grown and small area, self-aligned HBTs with 1.5 µm emitter finger width were fabricated using triple mesa etching and polyimide planarization techniques. The fabricated small area transistors showed a common-emitter current gain cut-off frequency (fT) as high as 200 GHz. Preliminary device reliability test results showed the potential of the heavily carbon-doped base InP/InGaAs HBT for high performance microwave and millimeter-wave applications. Applications of the InP/InGaAs single heterojunction bipolar transistor (SHBT) and double heterojunction bipolar transistor (DHBT) to a direct-coupled feedback amplifier and a power transistor, respectively, are presented.