This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.

A high efficient HBT MMIC power amplifier with a new on-chip bias control circuit was proposed for PCS applications. By adjusting the quiescent current in accordance with the output power levels, the average power usage efficiency of the power amplifier is improved by a factor of 1.4. The bias controlled power amplifier, depending on low (high) output power levels, shows 62(103) mA of quiescent current, 16(28) dBm output power with 7.5(35.4)% of power-added efficiency(PAE), -46(-45) dBc of adjacent-channel power ratio (ACPR), and 23.7(26.9) dB of gain