MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals

Joon Hyung KIM; Ji Hoon KIM; Youn Sub NOH; Chul Soon PARK

MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals

Joon Hyung KIM, Ji Hoon KIM, Youn Sub NOH, Chul Soon PARK

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This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.

Publication: IEICE TRANSACTIONS on Electronics Vol.E87-C No.7 pp.1192-1196

Publication Date: 2004/07/01

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Type of Manuscript: PAPER

Category: Microwaves, Millimeter-Waves

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Joon Hyung KIM, Ji Hoon KIM, Youn Sub NOH, Chul Soon PARK, "MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals" in IEICE TRANSACTIONS on Electronics, vol. E87-C, no. 7, pp. 1192-1196, July 2004, doi: .
Abstract: This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e87-c_7_1192/_p

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@ARTICLE{e87-c_7_1192,
author={Joon Hyung KIM, Ji Hoon KIM, Youn Sub NOH, Chul Soon PARK, },
journal={IEICE TRANSACTIONS on Electronics},
title={MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals},
year={2004},
volume={E87-C},
number={7},
pages={1192-1196},
abstract={This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.},
keywords={},
doi={},
ISSN={},
month={July},}

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TY - JOUR
TI - MMIC Power Amplifier with on Chip Adaptive Predistortion Function for W-CDMA Mobile Terminals
T2 - IEICE TRANSACTIONS on Electronics
SP - 1192
EP - 1196
AU - Joon Hyung KIM
AU - Ji Hoon KIM
AU - Youn Sub NOH
AU - Chul Soon PARK
PY - 2004
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E87-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2004
AB - This paper proposes a new on-chip linearizer self-adapting to the input power and its implementation to high linear monolithic microwave integrated circuit (MMIC) power amplifier for 1.95 GHz wide-band code division multiple-access (W-CDMA) system. The linearizer consists of InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit and reverse biased junction diode of which dynamic admittance to input power level functions adaptively to control the bias to the amplifier. The proposed linearizer has little insertion power loss, and more importantly, it consumes no additional die area and DC power. The HBT MMIC power amplifier with the integrated linearizer exhibits a maximum output power of 30.3 dBm, a power gain of 27.5 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and adjacent channel leakage power ratio of -38 dBc at 27 dBm of output power.
ER -