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Junko AKAGI Mamoru KURATA Jiro YOSHIDA
The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.