Transient Analysis of Collector-top HBTs Based on the Numerical Device Model
Summary :
The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.
- Publication
- IEICE TRANSACTIONS on transactions Vol.E69-E No.4 pp.283-285
- Publication Date
- 1986/04/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
- Category
- Compound Semiconductor Devices
Authors
Keyword
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Junko AKAGI, Mamoru KURATA, Jiro YOSHIDA, "Transient Analysis of Collector-top HBTs Based on the Numerical Device Model" in IEICE TRANSACTIONS on transactions,
vol. E69-E, no. 4, pp. 283-285, April 1986, doi: .
Abstract: The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e69-e_4_283/_p
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@ARTICLE{e69-e_4_283,
author={Junko AKAGI, Mamoru KURATA, Jiro YOSHIDA, },
journal={IEICE TRANSACTIONS on transactions},
title={Transient Analysis of Collector-top HBTs Based on the Numerical Device Model},
year={1986},
volume={E69-E},
number={4},
pages={283-285},
abstract={The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.},
keywords={},
doi={},
ISSN={},
month={April},}
Copy
TY - JOUR
TI - Transient Analysis of Collector-top HBTs Based on the Numerical Device Model
T2 - IEICE TRANSACTIONS on transactions
SP - 283
EP - 285
AU - Junko AKAGI
AU - Mamoru KURATA
AU - Jiro YOSHIDA
PY - 1986
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E69-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1986
AB - The switching performance of the collector top AlGaAs/GaAs heterojunction bipolar transistor (HBT) has been investigated by simulating the operation of single-stage inverters, five-stage ring oscillators, and 1/4 frequency dividers including the comparison between the collector-top HBT and the standard emitter-top-HBT.
ER -
English
