With the decrease in transistor feature size, power consumption, especially leakage power, has become a most important design concern. Because of their superior electrical properties and design flexibility, fin-type field-effect transistors (FinFETs) seem to be the most promising option in low-power applications. In order to support the VLSI digital system design flow based on logic synthesis, this paper proposes a design method for low-power high-performance standard cells based on IG-mode FinFETs. Such a method is derived on the basis of appropriately and artfully designing and optimizing the stacked structures in each standard cell, and applying the mixed forward and reverse back-gate bias technique in a well-chosen manner. The proposed method is also applicable when the supply voltage reduces to 0.5V to further reduce the leakage power consumption. By applying this design method, optimized IG-mode FinFET standard cells are generated, and they form a low-power high-performance standard cell library. Simulation results of the library cells indicate that the performance of the standard cells designed with the proposed method can be maintained while reducing leakage consumption by a factor of 58.9 at most. The 16-bit ripple carry adder implemented with this library can acquire up to 17.5% leakage power reduction.

With the technology scaling down, leakage power becomes an important part of total power consumption. The relatively large leakage current weakens the energy recovery capability of adiabatic circuits and reduces its superiority, compared with static CMOS circuits in the field of low-power design. In this paper, we rebuild three types of adiabatic circuits (2N2N2P, IPAL and DCPAL) based on FinFET devices to obtain a large leakage power reduction by rationally utilizing the different operating modes of FinFET devices (SG, LP, and IG). A 16-bit adiabatic adder has been investigated to demonstrate the advantages of FinFET adiabatic circuits. The Predictive Technology Model (PTM) is used for 32-nm bulk MOSFET and FinFET devices and all of the simulations are based on HSPICE. The results evince the proposed FinFET adiabatic circuits have a considerable reduction (more than 60% for SG mode FinFET and more than 80% for LP mode FinFET) of power consumption compared with the bulk MOSFET ones. Furthermore, the FinFET adiabatic circuits also have higher limiting frequency of clock source and better noise immunity.