The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CNFET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders.