An Energy-Efficient Full Adder Cell Using CNFET Technology
Summary :
The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CNFET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E95-C No.4 pp.744-751
- Publication Date
- 2012/04/01
- Publicized
- Online ISSN
- 1745-1353
- DOI
- 10.1587/transele.E95.C.744
- Type of Manuscript
- PAPER
- Category
- Electronic Circuits
Authors
Keyword
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Mohammad Reza RESHADINEZHAD, Mohammad Hossein MOAIYERI, Kaivan NAVI, "An Energy-Efficient Full Adder Cell Using CNFET Technology" in IEICE TRANSACTIONS on Electronics,
vol. E95-C, no. 4, pp. 744-751, April 2012, doi: 10.1587/transele.E95.C.744.
Abstract: The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CNFET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E95.C.744/_p
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@ARTICLE{e95-c_4_744,
author={Mohammad Reza RESHADINEZHAD, Mohammad Hossein MOAIYERI, Kaivan NAVI, },
journal={IEICE TRANSACTIONS on Electronics},
title={An Energy-Efficient Full Adder Cell Using CNFET Technology},
year={2012},
volume={E95-C},
number={4},
pages={744-751},
abstract={The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CNFET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders.},
keywords={},
doi={10.1587/transele.E95.C.744},
ISSN={1745-1353},
month={April},}
Copy
TY - JOUR
TI - An Energy-Efficient Full Adder Cell Using CNFET Technology
T2 - IEICE TRANSACTIONS on Electronics
SP - 744
EP - 751
AU - Mohammad Reza RESHADINEZHAD
AU - Mohammad Hossein MOAIYERI
AU - Kaivan NAVI
PY - 2012
DO - 10.1587/transele.E95.C.744
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E95-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2012
AB - The reduction in the gate length of the current devices to 65 nm causes their I-V characteristics to depart from the traditional MOSFETs. As a result, manufacturing of new efficient devices in nanoscale is inevitable. The fundamental properties of the metallic and semi-conducting carbon Nanotubes (CNTs) make them alternatives to the conventional silicon-based devices. In this paper an ultra high-speed and energy-efficient full adder is proposed, using Carbon Nanotube Field Effect Transistor (CNFET) in nanoscale. Extensive simulation results using HSPICE are reported to show that the proposed adder consumes lower power, and is faster compared to the previous adders.
ER -
English
