A large frequency dispersion of MOS C-V characteristics after Co-60 gamma ray irradiation was observed. The difference between flatband voltage shift and midgap voltage shift are discussed herein. The recovery of the interface states density and positive charge is also presented.

A few experimental reports are available for designing of MOS hall devices. We are experimentally studied several magnetic characteristics of the device which has indivisual 7 segment hall voltage probes. As a conclusion, we obtained most appropriate designing condition for the MOS hall device.