A few experimental reports are available for designing of MOS hall devices. We are experimentally studied several magnetic characteristics of the device which has indivisual 7 segment hall voltage probes. As a conclusion, we obtained most appropriate designing condition for the MOS hall device.
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Shinya YOSHIDA, Kazunori OHNISHI, Kenji KAWANISHI, Masayuki NAMIKI, "Basic Characteristics of MOS Hall Sensor" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 4, pp. 239-241, April 1987, doi: .
Abstract: A few experimental reports are available for designing of MOS hall devices. We are experimentally studied several magnetic characteristics of the device which has indivisual 7 segment hall voltage probes. As a conclusion, we obtained most appropriate designing condition for the MOS hall device.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_4_239/_p
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@ARTICLE{e70-e_4_239,
author={Shinya YOSHIDA, Kazunori OHNISHI, Kenji KAWANISHI, Masayuki NAMIKI, },
journal={IEICE TRANSACTIONS on transactions},
title={Basic Characteristics of MOS Hall Sensor},
year={1987},
volume={E70-E},
number={4},
pages={239-241},
abstract={A few experimental reports are available for designing of MOS hall devices. We are experimentally studied several magnetic characteristics of the device which has indivisual 7 segment hall voltage probes. As a conclusion, we obtained most appropriate designing condition for the MOS hall device.},
keywords={},
doi={},
ISSN={},
month={April},}
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TY - JOUR
TI - Basic Characteristics of MOS Hall Sensor
T2 - IEICE TRANSACTIONS on transactions
SP - 239
EP - 241
AU - Shinya YOSHIDA
AU - Kazunori OHNISHI
AU - Kenji KAWANISHI
AU - Masayuki NAMIKI
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 4
JA - IEICE TRANSACTIONS on transactions
Y1 - April 1987
AB - A few experimental reports are available for designing of MOS hall devices. We are experimentally studied several magnetic characteristics of the device which has indivisual 7 segment hall voltage probes. As a conclusion, we obtained most appropriate designing condition for the MOS hall device.
ER -