Proximity effect correction techniques are well known as being indispensable for drawing submicron integrated circuit patterns using electron beam equipment. This paper discusses one such technique, Pattern shape adjustment", or PSA". Proximity effect correction can be mainly classified into two methods - exposure dose intensity varying and pattern shape modifying. PSA is one variety of pattern shape modifying. This paper clarifies the problems and limitations of the PSA technique, shows its effectiveness and compares it with corrected and uncorrected EB pattern drawing.