Proximity Effect Correction in EB Lithography Using Pattern Shape Adjustment Techniques

Naoshi SUGIYAMA; Kazunori SAITOH

Proximity Effect Correction in EB Lithography Using Pattern Shape Adjustment Techniques

Naoshi SUGIYAMA, Kazunori SAITOH

Full Text Views

0

Cite this

Summary :

Proximity effect correction techniques are well known as being indispensable for drawing submicron integrated circuit patterns using electron beam equipment. This paper discusses one such technique, Pattern shape adjustment", or PSA". Proximity effect correction can be mainly classified into two methods - exposure dose intensity varying and pattern shape modifying. PSA is one variety of pattern shape modifying. This paper clarifies the problems and limitations of the PSA technique, shows its effectiveness and compares it with corrected and uncorrected EB pattern drawing.

Publication: IEICE TRANSACTIONS on transactions Vol.E63-E No.3 pp.198-203

Publication Date: 1980/03/25

Publicized

Online ISSN

DOI

Type of Manuscript: PAPER

Category: Integrated Circuits

Authors

Naoshi SUGIYAMA
Kazunori SAITOH

Keyword

Cite this

Copy

Naoshi SUGIYAMA, Kazunori SAITOH, "Proximity Effect Correction in EB Lithography Using Pattern Shape Adjustment Techniques" in IEICE TRANSACTIONS on transactions, vol. E63-E, no. 3, pp. 198-203, March 1980, doi: .
Abstract: Proximity effect correction techniques are well known as being indispensable for drawing submicron integrated circuit patterns using electron beam equipment. This paper discusses one such technique, Pattern shape adjustment", or PSA". Proximity effect correction can be mainly classified into two methods - exposure dose intensity varying and pattern shape modifying. PSA is one variety of pattern shape modifying. This paper clarifies the problems and limitations of the PSA technique, shows its effectiveness and compares it with corrected and uncorrected EB pattern drawing.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e63-e_3_198/_p

Copy

@ARTICLE{e63-e_3_198,
author={Naoshi SUGIYAMA, Kazunori SAITOH, },
journal={IEICE TRANSACTIONS on transactions},
title={Proximity Effect Correction in EB Lithography Using Pattern Shape Adjustment Techniques},
year={1980},
volume={E63-E},
number={3},
pages={198-203},
abstract={Proximity effect correction techniques are well known as being indispensable for drawing submicron integrated circuit patterns using electron beam equipment. This paper discusses one such technique, Pattern shape adjustment", or PSA". Proximity effect correction can be mainly classified into two methods - exposure dose intensity varying and pattern shape modifying. PSA is one variety of pattern shape modifying. This paper clarifies the problems and limitations of the PSA technique, shows its effectiveness and compares it with corrected and uncorrected EB pattern drawing.},
keywords={},
doi={},
ISSN={},
month={March},}

Copy

TY - JOUR
TI - Proximity Effect Correction in EB Lithography Using Pattern Shape Adjustment Techniques
T2 - IEICE TRANSACTIONS on transactions
SP - 198
EP - 203
AU - Naoshi SUGIYAMA
AU - Kazunori SAITOH
PY - 1980
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E63-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1980
AB - Proximity effect correction techniques are well known as being indispensable for drawing submicron integrated circuit patterns using electron beam equipment. This paper discusses one such technique, Pattern shape adjustment", or PSA". Proximity effect correction can be mainly classified into two methods - exposure dose intensity varying and pattern shape modifying. PSA is one variety of pattern shape modifying. This paper clarifies the problems and limitations of the PSA technique, shows its effectiveness and compares it with corrected and uncorrected EB pattern drawing.
ER -