We studied a 0.15-µm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of smallsignal equivalent circuit elements was obtained from Sparameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our largesignal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.

This paper presents the fabrication and evaluation of a 60 GHz fully integrated MMIC one-chip receiver based on pseudomorphic InGaP/InGaAs/GaAs HEMT technology. The receiver consists of two 2-stage low-noise amplifiers (LNAs), a single-balanced active-gate mixer, a local oscillator (LO), and a buffer amplifier for the LO. The receiver has a conversion gain of greater than 17 dB from 60.2 GHz to 62.3 GHz, and the maximum conversion gain is 20 dB at 62.2 GHz. The noise figure of receiver is less than 6 dB in the IF range between 100 MHz and 1 GHz for a 61.536 GHz LO frequency, and the minimum noise figure is 4.9 dB at 1 GHz IF.