IEICE TRANSACTIONS on Electronics
60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model
Summary :
We studied a 0.15-µm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of smallsignal equivalent circuit elements was obtained from Sparameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our largesignal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.
- Publication
- IEICE TRANSACTIONS on Electronics Vol.E79-C No.8 pp.1144-1151
- Publication Date
- 1996/08/25
- Publicized
- Online ISSN
- DOI
- Type of Manuscript
- PAPER
- Category
- Microwave and Millimeter Wave Technology
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Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Masahiko SHIMIZU, Yoji OHASHI, Tamio SAITO, Naofumi OKUBO, Yashimasa DAIDO, "60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model" in IEICE TRANSACTIONS on Electronics,
vol. E79-C, no. 8, pp. 1144-1151, August 1996, doi: .
Abstract: We studied a 0.15-µm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of smallsignal equivalent circuit elements was obtained from Sparameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our largesignal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e79-c_8_1144/_p
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@ARTICLE{e79-c_8_1144,
author={Kazuo SHIRAKAWA, Yoshihiro KAWASAKI, Masahiko SHIMIZU, Yoji OHASHI, Tamio SAITO, Naofumi OKUBO, Yashimasa DAIDO, },
journal={IEICE TRANSACTIONS on Electronics},
title={60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model},
year={1996},
volume={E79-C},
number={8},
pages={1144-1151},
abstract={We studied a 0.15-µm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of smallsignal equivalent circuit elements was obtained from Sparameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our largesignal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.},
keywords={},
doi={},
ISSN={},
month={August},}
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TY - JOUR
TI - 60-GHz Virtual Common-Drain-Biased Oscillator Design Using an Empirical HEMT Model
T2 - IEICE TRANSACTIONS on Electronics
SP - 1144
EP - 1151
AU - Kazuo SHIRAKAWA
AU - Yoshihiro KAWASAKI
AU - Masahiko SHIMIZU
AU - Yoji OHASHI
AU - Tamio SAITO
AU - Naofumi OKUBO
AU - Yashimasa DAIDO
PY - 1996
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E79-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 1996
AB - We studied a 0.15-µm InGaP/InGaAs/GaAs pseudomorphic HEMT operating under a negative drain bias, using a parameter extraction technique based on an analytical parameter transformation. The bias-dependent data of smallsignal equivalent circuit elements was obtained from Sparameters measured at up to 62.5 GHz at various bias settings. We then described the intrinsic part of the device using a new empirical large-signal model in which charge conservation and dispersion effects were taken into consideration. As far as we know, this is the first report to clarify the behavior of a HEMT operating under negative drain bias. We included our largesignal model in a commercially-available harmonic-balance simulator as a user-defined model, and designed a 60 GHz MMIC oscillator. The fabricated oscillator's characteristics agreed well with the design calculations.
ER -
English
