High-speed and low-power techniques are described for megabit-class size-configurable CMOS SRAM macrocells. To shorten the design turn-around-time, the methodology of abutting nine kinds of leaf cells is employed; two-level via-hole programming and the array-address decoder embedded in each control leaf cell present a divided-memory-array structure. A new squashed-memory-cell architecture using trench isolation and stacked-via-holes is proposed to reduce access times and power dissipation. To shorten the time for writing data, per-bitline architecture is proposed, in which every bitline has a personal writing driver. Also, read-out circuitry using a current-sense-type two-stage sense amplifier is designed. The effect of the non-multiplexed bitline scheme for fast read-out is shown in a simulation result. To reduce the noise from the second- to first-stage amplifier due to a feedback loop, current paths are separated so as not to cause common impedance. To confirm the techniques described in this paper, a 1-Mb SRAM test chip was fabricated with an advanced 0.35-µm CMOS/bulk process. The SRAM has demonstrated 250-MHz operation with a 2.5-V typical power supply. Also, 100-mW power dissipation was obtained at a practical operating frequency of 150-MHz.