Clock driver suffers from delay variation due to manufacturing and environmental variabilities as well as combinational cells. The delay variation causes clock skew and jitter, and varies both setup and hold timing margins. This paper presents a timing verification method that takes into consideration delay variation inside a clock network due to both manufacturing variability and dynamic power supply noise. We also discuss that setup and hold slack computation inherently involves a structural correlation problem due to common paths, and demonstrate that assigning individual random variables to upstream clock drivers provides a notable accuracy improvement in clock skew estimation with limited increase in computational cost. We applied the proposed method to industrial designs in 90 nm process. Experimental results show that dynamic delay variation reduces setup slack by over 500 ps and hold slack by 16.4 ps in test cases.

Device-parameter estimation sensors inside a chip are gaining its importance as the post-fabrication tuning is becoming of a practical use. In estimation of variational parameters using on-chip sensors, it is often assumed that the outputs of variation sensors are not affected by random variations. However, random variations can deteriorate the accuracy of the estimation result. In this paper, we propose a device-parameter estimation method with on-chip variation sensors explicitly considering random variability. The proposed method derives the global variation parameters and the standard deviation of the random variability using the maximum likelihood estimation. We experimentally verified that the proposed method improves the accuracy of device-parameter estimation by 11.1 to 73.4% compared to the conventional method that neglects random variations.

This paper investigates whether the self-heating effect in short intra-block wires will become apparent with technology scaling. These wires seem to have good thermal radiation characteristics, but we validate that the self-heating effect in local signal wires will be greater than that in optimal repeater-inserted global wires. Our numerical experiment shows that the maximum temperature increase from the silicon junction temperature will reach 40.4 in a steady state at a 14-nm process. Our attribution analysis also demonstrates that miniaturizing the area of wire cross-section exacerbates self-heating as well as using low-κ material and increased power dissipation in advanced technologies below 28 nm. It is revealed that the impact of self-heating on performance in local wires is limited, while underestimating the temperature may cause an unexpected reliability failure.