Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe2O3 at substrate temperature of 600 using the facing targets sputtering apparatus. The gas mixture of Ar and Xe of 0.18 Pa and O2 of 0.02 Pa was used as the sputtering gas and the dependences of crystallographic and magnetic characteristics on the partial Xe pressure PXe(0.0-0.18 Pa) were investigated. Films deposited at various PXe were composed of BaM ferrite and spinel crystallites, and the minimum centerline average roughness Ra of 8.3 nm was obtained at PXe of 0.10 Pa. Since saturation 4πMs of 5.1 kG and perpendicular anisotropy constant Ku1 of 4.23105 Jm-3 were larger than those of bulk BaM ferrite of 4.8 kG and 3.30105 Jm-3, respectively, these films appeared promising for use as perpendicular recording media.