Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe2O3 at substrate temperature of 600
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Nobuhiro MATSUSHITA, Kenji NOMA, Shigeki NAKAGAWA, Masahiko NAOE, "Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2" in IEICE TRANSACTIONS on Electronics,
vol. E78-C, no. 11, pp. 1562-1566, November 1995, doi: .
Abstract: Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe2O3 at substrate temperature of 600
URL: https://global.ieice.org/en_transactions/electronics/10.1587/e78-c_11_1562/_p
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@ARTICLE{e78-c_11_1562,
author={Nobuhiro MATSUSHITA, Kenji NOMA, Shigeki NAKAGAWA, Masahiko NAOE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2},
year={1995},
volume={E78-C},
number={11},
pages={1562-1566},
abstract={Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe2O3 at substrate temperature of 600
keywords={},
doi={},
ISSN={},
month={November},}
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TY - JOUR
TI - Deposition of Ba Ferrite Films for Perpendicular Magnetic Recording Media Using Mixed Sputtering Gas of Xe, Ar and O2
T2 - IEICE TRANSACTIONS on Electronics
SP - 1562
EP - 1566
AU - Nobuhiro MATSUSHITA
AU - Kenji NOMA
AU - Shigeki NAKAGAWA
AU - Masahiko NAOE
PY - 1995
DO -
JO - IEICE TRANSACTIONS on Electronics
SN -
VL - E78-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 1995
AB - Ba ferrite films were deposited epitaxially on ZnO underlayer from targets with composition of BaO-6.5Fe2O3 at substrate temperature of 600
ER -