Si single-electron transistors with a high voltage gain at a considerably high temperature have been fabricated by vertical pattern-dependent oxidation. The method enables the automatic formation of very small tunnel junctions having capacitances of less than 1 aF. In addition, the use of a thin (a few ten nanometers thick) gate oxide allows a strong coupling of the island to the gate, which results in a gate capacitance larger than the junction capacitances. It is demonstrated at 27 K that an inverting voltage gain, which is governed by the ratio of the gate capacitance to the drain tunnel capacitance, exceeds 3 under constant drain current conditions.

In this paper, mixed Gibbs sampling multiple-input multiple-output (MIMO) detection with forcible search is proposed. In conventional Gibbs sampling MIMO detection, the problem of stalling occurs under high signal-to-noise ratios (SNRs) which degrades the detection performance. Mixed Gibbs sampling (MGS) is one solution to this problem. In MGS, random sampling is carried out with a constant probability regardless of whether a current search falls into a local minimum. In the proposed scheme, combined with MGS, multiple candidate symbols are forcibly changed when the search is captured by a local minimum. The search restarts away from the local minimum which effectively enlarges the search area in the solution space. Numerical results obtained through computer simulation show that the proposed scheme achieves better performance in a large scale MIMO system with QPSK signals.