Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H2 to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510-3 Ωcm, whereas for Ar+1%H2 at 0.3 Pa, it markedly decreases to 2.5210-4 Ωcm. In this case, the carrier density and Hall mobility are 1.121021 cm-3 and 23.4 cm2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H2 and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.